CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME

• Main Authors: CHOU HUNG SHENG, YANG CHENG JUI, LAN CHUNG WEN, CHIANG YU TSUNG, YU WEN HUAI, HSU SUNG LIN, YANG YU MIN, LAN WEN CHIEH, HSU WEN CHING, PAI KAI YUAN
• Format: Patent
• Language: English; Korean
• Published: 05.06.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE: A crystalline silicon ingot and a manufacturing method of the same are provided to use a nucleation promoting layer, thereby providing a silicon melted solution having a dense nucleation part. CONSTITUTION: A nucleation promoting layer(2) is included in a lower part of a mold(16) positioned inside a base(17). The nucleation promoting layer includes multiple crystal grains having irregular shapes. A silicon source is supplied to the nucleation promoting layer of the mold. The mold is heated until the silicon source is completely melted to become a silicon melted solution. Multiple silicon grains form a nucleus on the nucleation promoting layer.