SEMICONDUCTOR MEMORY DEVICE COMPRISING INITIALIZATION SIGNAL GENERATION CIRCUIT

PURPOSE: A semiconductor memory device including an initialization signal generating circuit is provided to stably perform an initialization operation by accurately setting a level shift point of an initialization signal. CONSTITUTION: An initialization signal output unit(31) generates an initializa...

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Bibliographic Details
Main Author LEE, EUN RYEONG
Format Patent
LanguageEnglish
Korean
Published 16.05.2013
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE: A semiconductor memory device including an initialization signal generating circuit is provided to stably perform an initialization operation by accurately setting a level shift point of an initialization signal. CONSTITUTION: An initialization signal output unit(31) generates an initialization signal which is enabled for an auto refresh section in an initialization mode in response to a flag signal after the entry of the initialization mode. A refresh signal generating unit(32) generates a refresh counting signal and a preprocess fresh signal with the same cycle as the auto refresh signal in response to the flag signal and the auto refresh signal. A counter unit(33) counts a counting signal in response to the refresh counting signal. The counter unit generates a counting initialization signal which is enabled and delayed with the pulse width of the refresh counting signal after the counting signal is combined with a preset mode. [Reference numerals] (10) Flag signal generating unit; (20) Auto refresh signal generating unit; (31) Initialization signal output unit; (32) Refresh signal generating unit; (33) Counter unit
Bibliography:Application Number: KR20110116136