METHOD OF FORMING FINE PATTERN MASK AND METHOD OF FORMING FINE PATTENR USING THE SAME

• Main Authors: LEE, SUNG HUN, LEE, JI SEON, KHANG, YOON HO, UM, HYOUNG SICK, CHAE, JAE JUN, SUH, KAHP YANG, YU, SE HWAN
• Format: Patent
• Language: English; Korean
• Published: 02.05.2013
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS THEREFOR; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

PURPOSE: A method for forming a fine pattern mask and a method for forming a fine pattern using the same are provided to use a fine pattern mask as an etch mask and improve the uniformity and the accuracy of a fine pattern. CONSTITUTION: An etch object layer(10) is formed on a substrate. A convex pattern having convex parts is formed on the etch object layer. A resin composition is coated on the convex pattern to form a resin layer. The resin layer is ashed or etched to form a first resin pattern(40b) having a second curved surface(Cv2). The first resin patterns is processed to form a second resin pattern(40c) having a third curved surface(Cv3). The etch object layer is etched using the second resin pattern as an etch mask to form a fine pattern. [Reference numerals] (AA) Heat