APPARATUS FOR MONITORING ION IMPLANTATION

PURPOSE: An apparatus for monitoring ion implantation is provided to uniformly distribute ions on a wafer by controlling the transfer speed of the wafer and ion beam scanning frequency. CONSTITUTION: A first sensor(112), a second sensor(114), and a wafer(106) are arranged in an ion implantation curr...

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Bibliographic Details
Main Authors LIN CHIN HSIANG, CHANG CHUN LIN, CHENG NAI HAN, HWANG CHIH HONG, YANG CHI MING
Format Patent
LanguageEnglish
Korean
Published 26.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An apparatus for monitoring ion implantation is provided to uniformly distribute ions on a wafer by controlling the transfer speed of the wafer and ion beam scanning frequency. CONSTITUTION: A first sensor(112), a second sensor(114), and a wafer(106) are arranged in an ion implantation current profile. A controller(120) determines the ion dose of the wafer by using the first sensor and the second sensor, and controls the scanning frequency of ion beam and the transfer speed of the wafer.
Bibliography:Application Number: KR20120015513