DATA READ CIRCUIT, NONVOLATILE MEMORY DEVICE HAVING THE SAME AND METHOD FOR READING DATA OF NONVOLATILE MEMORY DEVICE

PURPOSE: A data read circuit, a nonvolatile memory device including the same, and a method for reading data in the nonvolatile memory device are provided to secure the reliability of data in correspondence to the deviation of various elements related to a memory operation. CONSTITUTION: A nonvolatil...

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Bibliographic Details
Main Authors KIM, CHAN KYUNG, PARK, CHUL WOO, HWANG, HONG SUN, KANG, SANG BEOM, OH, HYUNG ROK
Format Patent
LanguageEnglish
Korean
Published 18.03.2013
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE: A data read circuit, a nonvolatile memory device including the same, and a method for reading data in the nonvolatile memory device are provided to secure the reliability of data in correspondence to the deviation of various elements related to a memory operation. CONSTITUTION: A nonvolatile cell array includes a memory cell and a reference cell. A clamping circuit(3151) is electrically connected to the memory cell and clamps the level of a voltage applied to a data sensing line in a data read operation. A clamp voltage generating unit(3172) generates a clamping voltage in response to a first voltage due to a reference cell and feeds back a clamping voltage to the clamping circuit. The clamping circuit includes a clamping transistor to receive the clamping voltage through a gate electrode.
Bibliography:Application Number: KR20110091317