PRECURSORS FOR PHOTOVOLTAIC PASSIVATION

• Main Authors: RIDGEWAY ROBERT GORDON, HUTCHISON KATHERINE ANNE, MALLIKARJUNAN ANUPAMA, SAVO MICHAEL T, HAAS MARY KATHRYN
• Format: Patent
• Language: English; Korean
• Published: 15.03.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

PURPOSE: A precursor for photovoltaic passivation is provided to improve device efficiency by minimizing the amount of light reflected from a front surface of the device through the optimum thickness of a layer with regard to a refractive index. CONSTITUTION: A photovoltaic cell with a front surface and a rear surface is provided. A first silicon precursor is provided. An oxygen supply source is provided. A silicon oxide layer with a thickness of 5 to 70 nm is deposited on one or more surface of the photovoltaic cell. A second silicon precursor is provided. A nitrogen supply source is provided. A silicon nitride layer with a thickness of 20 to 200 nm is deposited on the silicon oxide layer. [Reference numerals] (AA,GG,LL) Front surface metallization; (BB,HH,MM,UU) Front surface passivation layer; (CC,II) P-doped silicon emitter; (DD,JJ) N-doped silicon absorbent; (EE,PP,WW) Rear surface passivation layer; (FF,KK,QQ) Rear surface metallization; (NN) N-doped silicon emitter; (OO) P-doped silicon absorbent; (RR) N or p-doped silicon substrate; (SS) N+-doped silicon; (TT) Front surface anti-reflection coating; (VV) P+-doped silicon