FAST THERMAL ANNEALING OF GAN LEDS

PURPOSE: A GaN LED and a rapid thermal annealing method thereof are provided to obtain high efficiency by reducing a serial resistance and a turn-on voltage. CONSTITUTION: A p-GaN multilayer structure(30) including a p-GaN layer(50) and an n-GaN layer(40) is formed on a substrate(20). A rapid therma...

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Bibliographic Details
Main Authors HAWRYLUK ANDREW M, WANG YUN
Format Patent
LanguageEnglish
Korean
Published 07.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A GaN LED and a rapid thermal annealing method thereof are provided to obtain high efficiency by reducing a serial resistance and a turn-on voltage. CONSTITUTION: A p-GaN multilayer structure(30) including a p-GaN layer(50) and an n-GaN layer(40) is formed on a substrate(20). A rapid thermal annealing process is performed on the p-GaN layer. A transparent conductive layer is formed on the GaN multilayer structure. A p-contact(90p) is added to the transparent conductive layer. An n-contact(90n) is added to the n-GaN layer. The rapid thermal annealing process is performed for 10 seconds or less.
Bibliography:Application Number: KR20120081752