NONVOLATILE MEMORY DEVICE WITH VERTICAL MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A nonvolatile memory device including a memory cell of a vertical structure and a manufacturing method thereof are provided to reduce manufacturing costs per unit bit by increasing the number of memory gates to improve memory integration. CONSTITUTION: A plurality of gate electrodes(103A,10...

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Bibliographic Details
Main Author AHN, JUNG RYUL
Format Patent
LanguageEnglish
Korean
Published 06.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A nonvolatile memory device including a memory cell of a vertical structure and a manufacturing method thereof are provided to reduce manufacturing costs per unit bit by increasing the number of memory gates to improve memory integration. CONSTITUTION: A plurality of gate electrodes(103A,103B,103C,103D) are vertically laminated on a semiconductor substrate(101) and are extended in a first direction. A bonding layer(111A) includes a first region and a second region between the plurality of gate electrodes. The first region is extended in a second direction across the gate electrode on the semiconductor substrate. A cell channel layer(111B) is formed between the plurality of gate electrodes. A charge trap dielectric layer(110) is formed between the gate electrode and the cell channel layer.
Bibliography:Application Number: KR20110084122