SEED LAYER AND FREE MAGNETIC LAYER FOR PERPENDICULAR ANISOTROPY IN A SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY

A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel ju...

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Bibliographic Details
Main Author WORLEDGE DANIEL C
Format Patent
LanguageEnglish
Korean
Published 25.02.2013
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Summary:A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel junction (MTJ) stack.
Bibliography:Application Number: KR20127026965