APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING

Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form...

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Main Authors OLSEN CHRISTOPHER S, TANG JING, WANG ANCHUAN, INGLE NITIN K, RANISH JOSEPH M, MARIN JOSE A, SCOTNEY CASTLE MATTHEW D, SWENBERG JOHANES F, HUNTER AARON M, NGUYEN VICKY, GANGULY UDAYAN, HEMKAR MANISH, SRINIVASAN SWAMINATHAN
Format Patent
LanguageEnglish
Korean
Published 14.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
Bibliography:Application Number: KR20127026542