LOW-K DIELECTRIC LAYER AND POROGEN

PURPOSE: A low-k dielectric layer and porogen are provided to easily cross-link the porogen by uniformly distributing the porogen in matrix materials using a small reynolds number of molecules. CONSTITUTION: A substrate(101) includes an active layer of a silicon substrate. An active device(103) is f...

Full description

Saved in:
Bibliographic Details
Main Authors LIOU JOUNG WEI, PENG YU YUN, LIN KENG CHU, YANG HUI CHUN
Format Patent
LanguageEnglish
Korean
Published 14.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A low-k dielectric layer and porogen are provided to easily cross-link the porogen by uniformly distributing the porogen in matrix materials using a small reynolds number of molecules. CONSTITUTION: A substrate(101) includes an active layer of a silicon substrate. An active device(103) is formed as a single transistor. A metallization layer(105) is formed on the substrate and the active device and connects various active devices. A contact unit is electrically contacted with one active device.
Bibliography:Application Number: KR20110097083