METHOD FOR MANUFACTURING 3D STRUCTURED NON-VOLATILE MEMORY DEVICE

PURPOSE: A method for manufacturing a nonvolatile memory device of a 3D structure is provided to increase a cell current by forming a first protection layer and a second protection layer with carbon on a pipe gate. CONSTITUTION: A first protection layer(22) is formed on a pipe gate(20). A second pro...

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Main Authors KIM, EUN MI, KIM, SU YOUNG, BIN, JIN HO, CHO, SUNG YOON
Format Patent
LanguageEnglish
Korean
Published 14.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract PURPOSE: A method for manufacturing a nonvolatile memory device of a 3D structure is provided to increase a cell current by forming a first protection layer and a second protection layer with carbon on a pipe gate. CONSTITUTION: A first protection layer(22) is formed on a pipe gate(20). A second protection layer(23) is formed along the front side of the pipe gate with the first protection layer. A plurality of first material layers and a plurality of second material layers are alternatively formed on the second protection layer. The plurality of first material layers and the plurality of second material layers are etched. A plurality of slits are formed by an etching process.
AbstractList PURPOSE: A method for manufacturing a nonvolatile memory device of a 3D structure is provided to increase a cell current by forming a first protection layer and a second protection layer with carbon on a pipe gate. CONSTITUTION: A first protection layer(22) is formed on a pipe gate(20). A second protection layer(23) is formed along the front side of the pipe gate with the first protection layer. A plurality of first material layers and a plurality of second material layers are alternatively formed on the second protection layer. The plurality of first material layers and the plurality of second material layers are etched. A plurality of slits are formed by an etching process.
Author KIM, EUN MI
KIM, SU YOUNG
BIN, JIN HO
CHO, SUNG YOON
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Snippet PURPOSE: A method for manufacturing a nonvolatile memory device of a 3D structure is provided to increase a cell current by forming a first protection layer...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title METHOD FOR MANUFACTURING 3D STRUCTURED NON-VOLATILE MEMORY DEVICE
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