METHOD FOR MANUFACTURING 3D STRUCTURED NON-VOLATILE MEMORY DEVICE

PURPOSE: A method for manufacturing a nonvolatile memory device of a 3D structure is provided to increase a cell current by forming a first protection layer and a second protection layer with carbon on a pipe gate. CONSTITUTION: A first protection layer(22) is formed on a pipe gate(20). A second pro...

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Bibliographic Details
Main Authors KIM, EUN MI, KIM, SU YOUNG, BIN, JIN HO, CHO, SUNG YOON
Format Patent
LanguageEnglish
Korean
Published 14.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing a nonvolatile memory device of a 3D structure is provided to increase a cell current by forming a first protection layer and a second protection layer with carbon on a pipe gate. CONSTITUTION: A first protection layer(22) is formed on a pipe gate(20). A second protection layer(23) is formed along the front side of the pipe gate with the first protection layer. A plurality of first material layers and a plurality of second material layers are alternatively formed on the second protection layer. The plurality of first material layers and the plurality of second material layers are etched. A plurality of slits are formed by an etching process.
Bibliography:Application Number: KR20110077830