ATOMIC LAYER ETCHING METHOD OF GRAPHENE

PURPOSE: An atomic layer etching method is provided to control graphene etching with an atom as a unit, to selectively control the etching depth of graphene, to be processed uncomplicatedly, and to be commercialized. CONSTITUTION: An atomic layer etching method includes the following steps: absorbin...

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Bibliographic Details
Main Authors YEOM, GEUN YOUNG, MIN, KYUNG SEOK, KIM, YI YEON, LIM, WOONG SUN
Format Patent
LanguageEnglish
Korean
Published 30.01.2013
Subjects
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
THEIR RELEVANT APPARATUS
TRANSPORTING
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Summary:PURPOSE: An atomic layer etching method is provided to control graphene etching with an atom as a unit, to selectively control the etching depth of graphene, to be processed uncomplicatedly, and to be commercialized. CONSTITUTION: An atomic layer etching method includes the following steps: absorbing a reactive radical on the surface of graphene; irradiating an energy source in graphene absorbed in the reactive radical; the two steps are repeated over two times; the graphene includes the thin film of overlapped multi-layer graphene; a singular layer of the thin film of graphene is etched by performing the atomic layer etching method one time; the reactive radical is generated with plasma.
Bibliography:Application Number: KR20120074309