FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD FOR THE SAME

PURPOSE: A field effect transistor and a manufacturing method thereof are provided to reduce the constant resistance of a field effect transistor by forming an electrode and a channel with a graphene layer. CONSTITUTION: A source and a drain electrodes(20,30) are respectively formed on a substrate....

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Bibliographic Details
Main Authors YEOM, GEUN YOUNG, LIM, WOONG SUN
Format Patent
LanguageEnglish
Korean
Published 30.01.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A field effect transistor and a manufacturing method thereof are provided to reduce the constant resistance of a field effect transistor by forming an electrode and a channel with a graphene layer. CONSTITUTION: A source and a drain electrodes(20,30) are respectively formed on a substrate. A channel layer(40) is electrically connected to the source and the drain electrode. The source, the drain electrode and the channel layer include a graphene layer. The graphene layer is formed on a metallic catalyst thin film by a CVD(Chemical Vapor Deposition) method.
Bibliography:Application Number: KR20110072851