STRUCTURE AND METHOD FOR SINGLE GATE NON-VOLATILE MEMORY DEVICE

PURPOSE: A structure and method for a single gate nonvolatile memory device are provided to improve productivity by simultaneously forming common drain and source in the same process. CONSTITUTION: A semiconductor substrate(210) includes a peripheral region(212) and a memory region(214). A gate stac...

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Bibliographic Details
Main Authors TSENG HUANG WEN, TSUI YING KIT
Format Patent
LanguageEnglish
Korean
Published 28.01.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A structure and method for a single gate nonvolatile memory device are provided to improve productivity by simultaneously forming common drain and source in the same process. CONSTITUTION: A semiconductor substrate(210) includes a peripheral region(212) and a memory region(214). A gate stack(220) includes a first gate dielectric feature(226a) and a first gate electrode(228a). A second gate stack(222) includes a second gate dielectric feature(226b) and a second gate electrode(228b). A third gate stack(224) includes a third gate dielectric feature(226c) and a third gate electrode(228c). The second gate stack and the third gate stack are separated by an STI feature(216).
Bibliography:Application Number: KR20120012880