MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE

PURPOSE: A memory element, a manufacturing method thereof, and a memory device are provided to improve the thermal resistance of the memory element by forming an ion source layer using first and second ion source layers with the different content of chalcogen. CONSTITUTION: A memory element comprise...

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Main Authors MIZUGUCHI TETSUYA, OHBA KAZUHIRO, SHIMUTA MASAYUKI, YASUDA SHUICHIRO, ARATANI KATSUHISA
Format Patent
LanguageEnglish
Korean
Published 18.01.2013
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Summary:PURPOSE: A memory element, a manufacturing method thereof, and a memory device are provided to improve the thermal resistance of the memory element by forming an ion source layer using first and second ion source layers with the different content of chalcogen. CONSTITUTION: A memory element comprises a first electrode, a memory layer(20), and a second electrode. The memory layer has a resistance change layer(21) and an ion source layer(22). The ion source layer is composed of first and second ion source layers(22A,22B). The first ion source layer comprises one or more kinds of chalcogen among Te, S, and Se. The second ion source layer comprises chalcogen with the content different from the first ion source.
Bibliography:Application Number: KR20120063035