THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

• Main Authors: KANG, SU HYOUNG, KHANG, YOON HO, LEE, YONG SU, YU, SE HWAN
• Format: Patent
• Language: English; Korean
• Published: 18.01.2013
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A thin film transistor and a manufacturing method thereof are provided to improve the electric stability of a switching device by preventing a source electrode and a drain electrode from reacting with a passivation layer. CONSTITUTION: A semiconductor layer overlaps with the gate electrode. A gate insulation layer(120) is arranged between the gate electrode and the semiconductor layer. A source electrode(SE1) overlaps with the semiconductor layer. A drain electrode(DE1) is separated from the source electrode. A graphene pattern(140) is arranged between the semiconductor layers.