METHOD OF GRAPHENE GROWING AND GRAPHENE SIZE ADJUSTING

• Main Authors: CHOI, JAE WU, LEE, CHANG MOOK
• Format: Patent
• Language: English; Korean
• Published: 16.01.2013
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: A method for growing graphene and a method for controlling the size of graphene crystal are provided to control the size of the graphene crystal and to be freely applied to other devices. CONSTITUTION: A method for growing graphene comprises: a step of depositing the graphene on a glass substrate without a catalyst; a step of growing the graphene(S100); and a step of depositing a metal catalyst on the grown graphene(S200). The method further comprises a step of performing thermal treatment using CVD(chemical vapor deposition)(S300); and a step of etching using a metal etching solution(S400).