SEMICONDUCTOR DEVICES

PURPOSE: A semiconductor device is provided to improve reliability by maximizing the width of second impurity doping regions. CONSTITUTION: A driving circuit region includes a device isolation pattern, a gate electrode(120), a gate dielectric pattern, a first impurity doping region, and a driving tr...

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Bibliographic Details
Main Authors HAN, SEUNG UK, CHOI, JAY BOK, LEE, DONG HYUN, JEON, NAM HO
Format Patent
LanguageEnglish
Korean
Published 27.12.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device is provided to improve reliability by maximizing the width of second impurity doping regions. CONSTITUTION: A driving circuit region includes a device isolation pattern, a gate electrode(120), a gate dielectric pattern, a first impurity doping region, and a driving transistor. A device isolation pattern defines an active part on a substrate. A gate electrode is arranged on the substrate and includes a closed loop type channel part(123). A gate dielectric pattern is arranged between the active part and the gate electrode. A first impurity doping region is arranged in the active part surrounded with the channel part and is separated from the device isolation pattern. A driving transistor is arranged in the active part outside the gate electrode and is separated from the first impurity doping region.
Bibliography:Application Number: KR20110059022