METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a nitride semiconductor device is provided to prevent the deterioration of the crystal quality of a high resistive buffer layer by forming a nitride semiconductor layer with lower resistance than a high resistive buffer layer on the high resistive buffer layer. CO...

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Bibliographic Details
Main Author OHNO AKIHITO
Format Patent
LanguageEnglish
Korean
Published 26.12.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing a nitride semiconductor device is provided to prevent the deterioration of the crystal quality of a high resistive buffer layer by forming a nitride semiconductor layer with lower resistance than a high resistive buffer layer on the high resistive buffer layer. CONSTITUTION: An AlN high resistive buffer layer(2) is formed on an SiC substrate(1). A GaN electron driving layer(3) is formed on the AlN high resistive buffer layer. An Al0.2Ga0.8N electron supplying layer(4) is formed on the GaN electron driving layer. The AlN high resistive buffer layer has higher resistance than the GaN electron driving layer and the Al0.2Ga0.8N electron supplying layer. A gate electrode(5), a source electrode(6), and a drain electrode(7) are formed on the Al0.2Ga0.8N electron supplying layer.
Bibliography:Application Number: KR20120060779