THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME

• Main Author: LEE, MIN JIC
• Format: Patent
• Language: English; Korean
• Published: 12.12.2012
• Subjects: ADVERTISING; ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DISPLAY; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to improve aperture ratio by eliminating a common line which is parallel to a gate line within a pixel region. CONSTITUTION: A gate line(GL) is arranged on a substrate in a first direction. A data line(DL) is arranged in a second direction which is perpendicular to the gate line. A common line(CL) is arranged in the second direction which is parallel to the data line. A gate electrode is connected to the gate line. A source electrode is connected to the data line.