THIN FILM TRANSISTOR, ORGANIC LUMINESCENCE DISPLAY AND METHOD OF MANUFACTURING THEREOF

• Main Authors: YANG, HUI WON, KIM, EUN HYUN
• Format: Patent
• Language: English; Korean
• Published: 16.10.2012
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A thin film transistor, an organic light emitting display device including the same, and a manufacturing method thereof are provided to minimize the reduction of drain current by reducing series resistance. CONSTITUTION: A gate electrode(150) is formed on a substrate(100). An active layer is insulated with the gate electrode by a gate insulating layer(102). An etching barrier layer comprises a first hole and a second hole for exposing the active layer. A first electrode comprises a second portion which connects the active layer to a first portion. A first region is formed on the etching barrier layer. A second electrode comprises a second region which connects the first region to the active layer. The first portion and second portion are overlapped with the gate electrode.