DONOR SUBSTRATE, PATTERNING METHOD, AND METHOD FOR PRODUCING DEVICE

Disclosed is a donor substrate including a support; a light-to-heat conversion layer and a transfer prevention layer formed on the support; and a transferring material layer formed on a top surface of the light-to-heat conversion layer and the transfer prevention layer; wherein a transfer region and...

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Bibliographic Details
Main Authors TANIMURA YASUAKI, FUJIMORI SHIGEO, NISHIMURA SEIICHIRO
Format Patent
LanguageEnglish
Korean
Published 15.10.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a donor substrate including a support; a light-to-heat conversion layer and a transfer prevention layer formed on the support; and a transferring material layer formed on a top surface of the light-to-heat conversion layer and the transfer prevention layer; wherein a transfer region and an antitransfer region are formed by combinations of the light-to-heat conversion layer and the transfer prevention layer, and the transferring material layer is formed on the whole surface of the transfer region and at least one part of the antitransfer region. The present invention provides a patterning method which enables large-scale and high-accuracy fine patterning at low cost without causing deterioration of characteristics of thin films which constitute devices such as organic light emitting devices, and a method for producing a device.
Bibliography:Application Number: KR20127017130