DIELECTRIC MATERIALS HAVING HIGH CRYSTALLINITY, APPARATUS AND METHOD FOR PREPARING THE SAME
PURPOSE: A high crystalline dielectric material and a manufacturing device and a method of manufacture thereof are provided to improve the crystallinity of particles. CONSTITUTION: A high crystalline dielectric material has a crystallization axial ratio of 1.003-1.010, a BET non-surface area of 4-80...
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Format | Patent |
Language | English Korean |
Published |
05.10.2012
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Abstract | PURPOSE: A high crystalline dielectric material and a manufacturing device and a method of manufacture thereof are provided to improve the crystallinity of particles. CONSTITUTION: A high crystalline dielectric material has a crystallization axial ratio of 1.003-1.010, a BET non-surface area of 4-80 m^2/g, and a particle size of 15-200 nanometers. The dielectric substance has a perovskite structure marked as ABO3. In the structure of ABO3, A is one or more selected from Mg, Ca, Sr, Pb, Ba and La. B is one or more selected from Ti, Zr and Hf. The manufacturing device of the high crystalline dielectric substance comprises a pair of material feeders(10,20), a mixing tank(30), an autoclave(40) and a cooling pump(50). A manufacturing method of the high crystalline dielectric substance comprises the following steps: dissolving starting raw material A and B in each reactor; manufacturing the nuclei of granules by reacting the starting raw material A and B in the blending tank; and growing the nuclei in a thermostat autoclave. [Reference numerals] (31) Ultrasonic device; (33) High pressure pump; (AA) Filter |
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AbstractList | PURPOSE: A high crystalline dielectric material and a manufacturing device and a method of manufacture thereof are provided to improve the crystallinity of particles. CONSTITUTION: A high crystalline dielectric material has a crystallization axial ratio of 1.003-1.010, a BET non-surface area of 4-80 m^2/g, and a particle size of 15-200 nanometers. The dielectric substance has a perovskite structure marked as ABO3. In the structure of ABO3, A is one or more selected from Mg, Ca, Sr, Pb, Ba and La. B is one or more selected from Ti, Zr and Hf. The manufacturing device of the high crystalline dielectric substance comprises a pair of material feeders(10,20), a mixing tank(30), an autoclave(40) and a cooling pump(50). A manufacturing method of the high crystalline dielectric substance comprises the following steps: dissolving starting raw material A and B in each reactor; manufacturing the nuclei of granules by reacting the starting raw material A and B in the blending tank; and growing the nuclei in a thermostat autoclave. [Reference numerals] (31) Ultrasonic device; (33) High pressure pump; (AA) Filter |
Author | CHOI, CHANG HAK PARK, KUM JIN |
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Snippet | PURPOSE: A high crystalline dielectric material and a manufacturing device and a method of manufacture thereof are provided to improve the crystallinity of... |
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SubjectTerms | ARTIFICIAL STONE CALCULATING CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPUTING CONCRETE COUNTING IMAGE DATA PROCESSING OR GENERATION, IN GENERAL LIME, MAGNESIA METALLURGY PERFORMING OPERATIONS PHYSICS REFRACTORIES SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER SLAG TRANSPORTING TREATMENT OF NATURAL STONE WORKING CEMENT, CLAY, OR STONE |
Title | DIELECTRIC MATERIALS HAVING HIGH CRYSTALLINITY, APPARATUS AND METHOD FOR PREPARING THE SAME |
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