DIELECTRIC MATERIALS HAVING HIGH CRYSTALLINITY, APPARATUS AND METHOD FOR PREPARING THE SAME
PURPOSE: A high crystalline dielectric material and a manufacturing device and a method of manufacture thereof are provided to improve the crystallinity of particles. CONSTITUTION: A high crystalline dielectric material has a crystallization axial ratio of 1.003-1.010, a BET non-surface area of 4-80...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
05.10.2012
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A high crystalline dielectric material and a manufacturing device and a method of manufacture thereof are provided to improve the crystallinity of particles. CONSTITUTION: A high crystalline dielectric material has a crystallization axial ratio of 1.003-1.010, a BET non-surface area of 4-80 m^2/g, and a particle size of 15-200 nanometers. The dielectric substance has a perovskite structure marked as ABO3. In the structure of ABO3, A is one or more selected from Mg, Ca, Sr, Pb, Ba and La. B is one or more selected from Ti, Zr and Hf. The manufacturing device of the high crystalline dielectric substance comprises a pair of material feeders(10,20), a mixing tank(30), an autoclave(40) and a cooling pump(50). A manufacturing method of the high crystalline dielectric substance comprises the following steps: dissolving starting raw material A and B in each reactor; manufacturing the nuclei of granules by reacting the starting raw material A and B in the blending tank; and growing the nuclei in a thermostat autoclave. [Reference numerals] (31) Ultrasonic device; (33) High pressure pump; (AA) Filter |
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Bibliography: | Application Number: KR20110026388 |