SEMICONDUCTOR DEVICE

PURPOSE: A semiconductor device is provided to improve productivity by forming a channel forming region, a source region, and a drain region with self-alignment without an impurity input process. CONSTITUTION: An electrode(102) is formed on a substrate(101). An insulation layer(103) is formed on the...

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Bibliographic Details
Main Author UOCHI HIDEKI
Format Patent
LanguageEnglish
Korean
Published 18.09.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device is provided to improve productivity by forming a channel forming region, a source region, and a drain region with self-alignment without an impurity input process. CONSTITUTION: An electrode(102) is formed on a substrate(101). An insulation layer(103) is formed on the electrode. A gate electrode(104) is formed on the insulation layer. A gate insulation layer(105) is formed on the insulation layer and the gate electrode. A semiconductor layer(106) is formed on the gate insulation layer.
Bibliography:Application Number: KR20120022861