VARIABLE IMPEDANCE CONTROL FOR MEMORY DEVICES
PURPOSE: A variable impedance control method for a memory device is provided to increase an effective signal speed by providing a line which minimizes signal reflection. CONSTITUTION: Impedance is changed by using switches which switch between a nonvolatile memory unit and an impedance terminal. Swi...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
30.08.2012
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A variable impedance control method for a memory device is provided to increase an effective signal speed by providing a line which minimizes signal reflection. CONSTITUTION: Impedance is changed by using switches which switch between a nonvolatile memory unit and an impedance terminal. Switches are controlled to connect a memory controller(110) to one nonvolatile memory unit and one or more impedance terminals by a shared bus. The impedance terminals provide a smaller load that is impedance matched with the source impedance on a shared bus(118) provided by the memory controller. |
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Bibliography: | Application Number: KR20120018792 |