RESIST COMPOSITION FOR EUV, METHOD FOR PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN

PURPOSE: A resist composition for extreme ultraviolet rays(EUV), a method for manufacturing the resist composition, and a resist patter forming method are provided to improve lithography characteristic in EUV lithography. CONSTITUTION: The sensitivity of a resist composition for EUV at the KrF light...

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Bibliographic Details
Main Authors KONNO KENRI, IWASHITA JUN
Format Patent
LanguageEnglish
Korean
Published 27.08.2012
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:PURPOSE: A resist composition for extreme ultraviolet rays(EUV), a method for manufacturing the resist composition, and a resist patter forming method are provided to improve lithography characteristic in EUV lithography. CONSTITUTION: The sensitivity of a resist composition for EUV at the KrF light of 248nm is represented by E0KrF. The sensitivity of the resist composition for EUV at EVU light is represented by E0EUV. The E0KrF is higher than the E0EUV. A resist pattern forming method includes the following: a resist film is formed on a support by using the resist composition; the resist film is exposed with EUV; and the resist film is developed to form resist patterns.
Bibliography:Application Number: KR20120012176