SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to simultaneously form a via hole corresponding to a source and a drain and a via hole corresponding to a first diffusion region with the same condition by forming a first metal silicide layer on a partial region of a su...

Full description

Saved in:
Bibliographic Details
Main Author KATAYAMA MASAYA
Format Patent
LanguageEnglish
Korean
Published 31.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A semiconductor device and a manufacturing method thereof are provided to simultaneously form a via hole corresponding to a source and a drain and a via hole corresponding to a first diffusion region with the same condition by forming a first metal silicide layer on a partial region of a surface of the first diffusion region. CONSTITUTION: An element isolation layer(31) is formed on a surface portion of a semiconductor substrate(30). A first diffusion region(42) of an n-type is formed within an active area(20) for a photo diode. A second diffusion region(56) of the n-type is formed on a part of the surface portion of the first diffusion region. A third diffusion region(70) of the n-type is formed on a part of the surface portion of the second diffusion region. A metal silicide layer(79) is formed on the surface of the third diffusion region.
Bibliography:Application Number: KR20120063273