SEMICONDUCTOR LIGHT EMITTING DEVICE, PROTECT FILM FOR SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR THE SAME

• Main Authors: FUJIWARA TOSHIHITO, SHIMAZU TADASHI, NISHIMORI TOSHIHIKO, NISHIKAWA SEIJI, KAWANO YUICHI
• Format: Patent
• Language: English; Korean
• Published: 27.07.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A semiconductor light emitting device, a protect film for the semiconductor light emitting device, and a manufacturing method thereof are provided to improve device reliability by simultaneously performing migration prevention and hydrogen blocking. CONSTITUTION: A semiconductor light emitting device has a plurality of semiconductor layers(12-14) formed on a substrate(11) and a plurality of electrode portions(15-18) for the plurality of semiconductor layers. A protective film protects the light emitting device. An SiN(Silicon Nitride) film(21) coats the surroundings of the plurality of semiconductor layers and the plurality of electrode portion. The SiN film is made of SiN in which a combination amount of Si-H(Silicon-Hydrogen) in the film is less than 1.0×1020(number/cm^3).