SEMICONDUCTOR DEVICE

PURPOSE: A semiconductor device is provided to alleviate a hot carrier effect of the semiconductor device by preventing a hot carrier to be trapped in a gate insulating layer. CONSTITUTION: A source region and a drain region are included within a substrate. A gate insulating layer(141) is provided t...

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Bibliographic Details
Main Authors KIM, DONG HYUN, PARK, KANG WOOK
Format Patent
LanguageEnglish
Korean
Published 20.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device is provided to alleviate a hot carrier effect of the semiconductor device by preventing a hot carrier to be trapped in a gate insulating layer. CONSTITUTION: A source region and a drain region are included within a substrate. A gate insulating layer(141) is provided to the substrate. A gate electrode(150) is formed on the gate insulating layer. The gate electrode comprises a first gate unit(151) adjacent to the source region and a second gate unit(152) adjacent to the drain region. A work function of the first gate unit is different with a work function of the second gate unit. The first gate unit and the second gate unit comprise a meal material. A first well region is adjacent to the source region. A drift region is located between the first well region and the drain region.
Bibliography:Application Number: KR20110003222