NANOROD TYPE SEMICONDUCTIOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR THE SAME

PURPOSE: A nanorod type semiconductor light emitting device and a manufacturing method are provided to precisely control a wavelength with simple method by changing a thickness of an insulating layer formed on a plurality of nanorods. CONSTITUTION: An upper surface of a base layer(11) is composed of...

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Main Authors CHUNG, HUN JAE, YOO, KYUNG HO, HWANG, SUNG WON, SUNG, YOUNG KYU, SHIN, YUN HEE
Format Patent
LanguageEnglish
Korean
Published 12.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A nanorod type semiconductor light emitting device and a manufacturing method are provided to precisely control a wavelength with simple method by changing a thickness of an insulating layer formed on a plurality of nanorods. CONSTITUTION: An upper surface of a base layer(11) is composed of graphene. A plurality of nanorods(14) is formed on the base layer. The nanorod is composed of a first conductive semiconductor layer. An active layer(15) and a second conductive semiconductor layer(16) are gradually formed on the surface of each nanorod. A transparent electrode layer(17) is formed on the surface of the second conductive semiconductor layer.
Bibliography:Application Number: KR20110000538