METHOD FOR PRODUCING BONDED SUBSTRATES

• Main Authors: KONG, SUN HWAN, KIM, KYOUNG JUN, UH, SUNG WOO, LEE, JU HEON, PARK, SEUNG YONG
• Format: Patent
• Language: English; Korean
• Published: 10.07.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for manufacturing a bonded substrate is provided to increase a contact area of a GaN(Gallium Nitride) substrate by preventing the GaN substrate from being bent before the GaN substrate is bonded to a carrier substrate. CONSTITUTION: A damage layer is formed by processing one side of a GaN(Gallium Nitride) substrate(S401). An ion implantation layer is formed on an opposite surface of the processed damage layer in the GaN substrate(S402). The GaN substrate and a carrier substrate are bonded(S403). The ion implantation layer inside the GaN substrate among bonded substrates is transformed into a gas layer by heating the bonded substrate(S404). The bonded substrates are separated based on the gas layer formed inside the GaN substrate(S405).