HIGH EFFICIENCY LIGHT EMITTING DIODE

PURPOSE: A high efficient light emitting diode is provided to prevent a concentrated current flow from a first electrode pad to a semiconductor stack structure by arranging an upper insulating layer between the first electrode pad and the semiconductor stack structure. CONSTITUTION: A semiconductor...

Full description

Saved in:
Bibliographic Details
Main Authors KIM, CHANG YOUN, YUN, JUN HO, LEE, JOON HEE, YOO, HONG JAE
Format Patent
LanguageEnglish
Korean
Published 06.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A high efficient light emitting diode is provided to prevent a concentrated current flow from a first electrode pad to a semiconductor stack structure by arranging an upper insulating layer between the first electrode pad and the semiconductor stack structure. CONSTITUTION: A semiconductor stack structure(30) is formed on a supporting substrate(41). The semiconductor stack structure includes a p-type compound semiconductor layer(29), an active layer(27), and an n-type compound semiconductor layer(25). A reflective metal layer(31) is located on a lower area of the semiconductor stack structure. A middle insulating layer(33) covers the reflective metal layer between the reflective metal layer and the supporting substrate. A barrier metal layer(35) prevents diffusion of metal materials of the reflective metal layer.
Bibliography:Application Number: KR20100136879