SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

PURPOSE: A semiconductor device and a fabricating method thereof are provided to improve reliability by arranging a passive device pattern on a floor side of a recess region lower than an upper portion of an active part. CONSTITUTION: A substrate includes a first transistor region, a second transist...

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Bibliographic Details
Main Authors YOON, BO UN, HAN, JEONG NAM, CHOI, SUK HUN, YEO, IN JOON
Format Patent
LanguageEnglish
Korean
Published 27.06.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device and a fabricating method thereof are provided to improve reliability by arranging a passive device pattern on a floor side of a recess region lower than an upper portion of an active part. CONSTITUTION: A substrate includes a first transistor region, a second transistor region, and a passive device region. A device isolation pattern(102) defines a first active part(105a) within the first transistor region and a second active part(105b) within the second transistor region. A passive device pattern(125r) is arranged on a floor side of a recess region formed within the device isolation pattern of the passive device region and includes a semiconductor material The floor side of the recess region is lower than an upper side of the active part.
Bibliography:Application Number: KR20100080955