LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

PURPOSE: A light emitting diode and a manufacturing method thereof are provided to uniformly distribute a current of a second electrode pad to an ohmic contact layer by forming an insulation layer on the lower side of the second electrode pad. CONSTITUTION: A substrate(200) includes a plurality of f...

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Bibliographic Details
Main Authors JUNG, SANG JUN, CHO, WON KEUN, CHOI, BYEONG KYUN
Format Patent
LanguageEnglish
Korean
Published 22.06.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A light emitting diode and a manufacturing method thereof are provided to uniformly distribute a current of a second electrode pad to an ohmic contact layer by forming an insulation layer on the lower side of the second electrode pad. CONSTITUTION: A substrate(200) includes a plurality of first protrusions(200a) which are protruded from the surface thereof. A buffer layer(210), a first semiconductor layer(220), an active layer(230), and a second semiconductor layer(240) are successively formed on the substrate. An insulation layer(250) is formed on a part of the second semiconductor layer. An ohmic contact layer(260) is formed on the second semiconductor layer including the insulation layer. A first electrode pad(280) is formed on a part of the first semiconductor layer.
Bibliography:Application Number: KR20100127360