PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS

A method is provided for forming a metal-silicon-containing film on a substrate by pulsed chemical vapor deposition. The method includes providing the substrate in a process chamber, maintaining the substrate at a temperature suited for chemical vapor deposition of a metal-silicon-containing film by...

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Bibliographic Details
Main Author WAJDA CORY
Format Patent
LanguageEnglish
Korean
Published 14.06.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method is provided for forming a metal-silicon-containing film on a substrate by pulsed chemical vapor deposition. The method includes providing the substrate in a process chamber, maintaining the substrate at a temperature suited for chemical vapor deposition of a metal-silicon-containing film by thermal decomposition of a metal-containing gas and a silicon-containing gas on the substrate, exposing the substrate to a continuous flow of the metal-containing gas, and during the continuous flow, exposing the substrate to sequential pulses of the silicon-containing gas.
Bibliography:Application Number: KR20127009304