HIGH-VOLTAGE TRANSISTOR STRUCTURE WITH REDUCED GATE CAPACITANCE

PURPOSE: A high voltage transistor structure with reduced gate capacitance is provided to easily discharge a capacitor connected to both input sides of a power system. CONSTITUTION: A drain region is arranged in the center of an N type well area(12). The drain region has a lateral dimension(d2) exte...

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Bibliographic Details
Main Authors BANERJEE SUJIT, PARTHASARATHY VIJAY
Format Patent
LanguageEnglish
Korean
Published 12.06.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A high voltage transistor structure with reduced gate capacitance is provided to easily discharge a capacitor connected to both input sides of a power system. CONSTITUTION: A drain region is arranged in the center of an N type well area(12). The drain region has a lateral dimension(d2) extended in a y direction. The dimension expresses the height or lateral length of a linear part of the drain region. A polysilicon member for forming a polysilicon gate(15) is extended in an x direction over an edge(13) corresponding to an N type well. The polysilicon gate covers an active part(18) of a gate oxide layer(14).
Bibliography:Application Number: KR20120056999