Method for fabricating capacitor with enhancing height of storage node

• Main Authors: PARK, JONG KOOK, SONG, HAN SANG
• Format: Patent
• Language: English; Korean
• Published: 01.06.2012
• Subjects: ELECTRICITY

PURPOSE: A capacitor formation method for increasing the height of a storage node is provided to increase the effective surface area of a dielectric layer, thereby increasing the capacitance of a capacitor compared to the capacitance of a limited substrate surface area. CONSTITUTION: A first mold layer(330) is formed on a semiconductor substrate(100). A first penetration hole(331) is formed on the semiconductor substrate. A hole blocking layer(400) blocks an entrance of the first penetration hole. A second mold layer(350) is formed on the first mold layer and the hole blocking layer. A second penetration hole(351) is formed by penetrating the second mold layer and being arranged on the first penetration hole. The hole blocking layer which is exposed by the second penetration hole is selectively removed.