MAGNETIC MEMORY DEVICES

PURPOSE: A magnetic memory device is provided to reduce the threshold current density of a magnetism pattern by arranging a perpendicular magnetic part in a magnetism pattern. CONSTITUTION: A first inter layer dielectric layer(103) is formed on a substrate(100). A lower contact plug(105) is arranged...

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Main Authors CHOI, SUK HUN, KIM, YOUNG HYUN, OH, SE CHUNG, LIM, WOO CHANG, LEE, JANG EUN, KIM, WOO JIN
Format Patent
LanguageEnglish
Korean
Published 16.05.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A magnetic memory device is provided to reduce the threshold current density of a magnetism pattern by arranging a perpendicular magnetic part in a magnetism pattern. CONSTITUTION: A first inter layer dielectric layer(103) is formed on a substrate(100). A lower contact plug(105) is arranged in a lower contact hole passing through the first inter layer dielectric layer. A reference pattern(130a) and a magnetism pattern(140a) are arranged on the first inter layer dielectric layer. A tunnel barrier pattern(135a) is interposed between the reference pattern and the magnetism pattern. A first electrode(110a) is interposed between the reference pattern and the first inter layer dielectric layer.
Bibliography:Application Number: KR20100110520