VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates (210) during atomic layer deposition processes. In one embodiment, a chamber (200) for processing substrates (210) is provided which includes a chamber (200) lid assembly (232) containing a centrall...

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Bibliographic Details
Main Authors AUBUCHON JOSEPH F, CHU SCHUBERT S, MA PAUL F, WU DIEN YEH, YUAN XIAOXIONG, BAJAJ PUNEET, KIM STEVEN H
Format Patent
LanguageEnglish
Korean
Published 15.05.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates (210) during atomic layer deposition processes. In one embodiment, a chamber (200) for processing substrates (210) is provided which includes a chamber (200) lid assembly (232) containing a centrally positioned gas dispersing channel (234), wherein a converging portion of the gas dispersing channel (234) tapers towards a central axis of the gas dispersing channel (234) and a diverging portion of the gas dispersing channel (234) tapers away from the central axis. The chamber (200) lid assembly (232) further contains a tapered bottom surface (260) extending from the diverging portion of the gas dispersing channel (234) to a peripheral portion of the chamber (200) lid assembly (232), wherein the tapered bottom surface (260) is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets (236a,b) within the converging portion of the gas dispersing channel (234) and positioned to provide a circular gas flow through the gas dispersing channel (234).
Bibliography:Application Number: KR20127006822