METHOD AND SYSTEM FOR PROVIDING HYBRID MAGNETIC TUNNELING JUNCTION ELEMENTS WITH IMPROVED SWITCHING

PURPOSE: A manufacturing method and system of a hybrid magnetic tunnel junction device are provided to offer magnetic junction having improved electrical characteristic of low record error rate, perpendicular anisotropic and/or the thermal stability etc. CONSTITUTION: A selective pinning layer(104)...

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Bibliographic Details
Main Authors APALKOV DMYTRO, KROUNBI MOHAMAD TOWFIK
Format Patent
LanguageEnglish
Korean
Published 15.05.2012
Subjects
ELECTRICITY
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Summary:PURPOSE: A manufacturing method and system of a hybrid magnetic tunnel junction device are provided to offer magnetic junction having improved electrical characteristic of low record error rate, perpendicular anisotropic and/or the thermal stability etc. CONSTITUTION: A selective pinning layer(104) is formed on a selective seed layer(102). A pinned layer(110) is formed on the selective pinning layer. A non-magnetic spacer layer(120) is formed on the pinned layer. A free layer(130) having cone-type anisotropy is formed on the non-magnetic spacer layer. A selective capping layer(140) is formed on the free layer having the cone-type anisotropy. The cone-type anisotropy improves switching property of the free layer. The pinned layer and the free layer have magnetism.
Bibliography:Application Number: KR20110110138