METHOD FOR PRODUCING AN EMITTER ELECTRODE FOR A CRYSTALLINE SILICON SOLAR CELL AND CORRESPONDING SILICON SOLAR CELL

In a method for producing a front-side emitter electrode as front contact for a silicon solar cell on a silicon wafer, a depression is produced in the front side of said silicon wafer. A front-side n-doped silicon layer and an antireflection layer are then produced. A paste is then introduced into t...

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Bibliographic Details
Main Authors MITZINNECK PETRA, HAVERKAMP HELGE, KIENINGER KAY, SOLLNER JURGEN
Format Patent
LanguageEnglish
Korean
Published 11.05.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a method for producing a front-side emitter electrode as front contact for a silicon solar cell on a silicon wafer, a depression is produced in the front side of said silicon wafer. A front-side n-doped silicon layer and an antireflection layer are then produced. A paste is then introduced into the depression, said paste containing electrically conductive metal particles and etching glass frit. Said paste, as a result of momentary heating, etches through the antireflection layer to the n-doped silicon layer making electrical contact with the latter. Afterwards, electrically conductive front contact metal is galvanically attached as front contact onto the heat-treated paste in the depression.
Bibliography:Application Number: KR20127006330