METHOD OF FABRICATING CAPACITOR AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE SAME
PURPOSE: A manufacturing method of a capacitor and a manufacturing method of a semiconductor device including the same are provided to improve capacitance of the capacitor by forming a bottom electrode wider than a preliminary bottom electrode through ion implantation using boron or arsenic. CONSTIT...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Korean |
Published |
02.05.2012
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Subjects | |
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Abstract | PURPOSE: A manufacturing method of a capacitor and a manufacturing method of a semiconductor device including the same are provided to improve capacitance of the capacitor by forming a bottom electrode wider than a preliminary bottom electrode through ion implantation using boron or arsenic. CONSTITUTION: A gate insulating layer(102) is formed on a substrate(100). A first interlayer insulating film(112) is formed on the gate insulating layer. A second interlayer insulating film(118) is formed on the first interlayer insulating film. A preliminary bottom electrode(130) having a first area is formed on the substrate. A bottom electrode(132) having a second area which is wider than the first area is formed by ion-implanting on the preliminary bottom electrode. A dielectric film and a top electrode are formed on the bottom electrode. A bit line is electrically connected with a first impurity area. A capacitor is electrically connected with a second impurity area. |
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AbstractList | PURPOSE: A manufacturing method of a capacitor and a manufacturing method of a semiconductor device including the same are provided to improve capacitance of the capacitor by forming a bottom electrode wider than a preliminary bottom electrode through ion implantation using boron or arsenic. CONSTITUTION: A gate insulating layer(102) is formed on a substrate(100). A first interlayer insulating film(112) is formed on the gate insulating layer. A second interlayer insulating film(118) is formed on the first interlayer insulating film. A preliminary bottom electrode(130) having a first area is formed on the substrate. A bottom electrode(132) having a second area which is wider than the first area is formed by ion-implanting on the preliminary bottom electrode. A dielectric film and a top electrode are formed on the bottom electrode. A bit line is electrically connected with a first impurity area. A capacitor is electrically connected with a second impurity area. |
Author | IM, KI VIN KIM, BONG HYUN LIM, HAN JIN SEO, JONG BOM LEE, YONG JAE NAM, SEOK WOO |
Author_xml | – fullname: LEE, YONG JAE – fullname: LIM, HAN JIN – fullname: IM, KI VIN – fullname: SEO, JONG BOM – fullname: KIM, BONG HYUN – fullname: NAM, SEOK WOO |
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Snippet | PURPOSE: A manufacturing method of a capacitor and a manufacturing method of a semiconductor device including the same are provided to improve capacitance of... |
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SubjectTerms | ELECTRICITY |
Title | METHOD OF FABRICATING CAPACITOR AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE SAME |
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