METHOD OF FABRICATING CAPACITOR AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE SAME

PURPOSE: A manufacturing method of a capacitor and a manufacturing method of a semiconductor device including the same are provided to improve capacitance of the capacitor by forming a bottom electrode wider than a preliminary bottom electrode through ion implantation using boron or arsenic. CONSTIT...

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Bibliographic Details
Main Authors LEE, YONG JAE, LIM, HAN JIN, IM, KI VIN, SEO, JONG BOM, KIM, BONG HYUN, NAM, SEOK WOO
Format Patent
LanguageEnglish
Korean
Published 02.05.2012
Subjects
ELECTRICITY
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Summary:PURPOSE: A manufacturing method of a capacitor and a manufacturing method of a semiconductor device including the same are provided to improve capacitance of the capacitor by forming a bottom electrode wider than a preliminary bottom electrode through ion implantation using boron or arsenic. CONSTITUTION: A gate insulating layer(102) is formed on a substrate(100). A first interlayer insulating film(112) is formed on the gate insulating layer. A second interlayer insulating film(118) is formed on the first interlayer insulating film. A preliminary bottom electrode(130) having a first area is formed on the substrate. A bottom electrode(132) having a second area which is wider than the first area is formed by ion-implanting on the preliminary bottom electrode. A dielectric film and a top electrode are formed on the bottom electrode. A bit line is electrically connected with a first impurity area. A capacitor is electrically connected with a second impurity area.
Bibliography:Application Number: KR20100103016