PROGRAMMING REVERSIBLE RESISTANCE SWITCHING ELEMENTS
A storage system and method for operating the storage system that uses reversible resistance-switching elements is described. Techniques are disclosed herein for varying programming conditions to account for different resistances that memory cells have. These techniques can program memory cells in f...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
25.04.2012
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Subjects | |
Online Access | Get full text |
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Summary: | A storage system and method for operating the storage system that uses reversible resistance-switching elements is described. Techniques are disclosed herein for varying programming conditions to account for different resistances that memory cells have. These techniques can program memory cells in fewer attempts, which can save time and/or power. Techniques are disclosed herein for achieving a high programming bandwidth while reducing the worst case current and/or power consumption. |
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Bibliography: | Application Number: KR20117028600 |