CHEMICAL MECHANICAL POLISHING OF SILICON CARBIDE COMPRISING SURFACES

Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having...

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Main Authors SINGH RAJIV K, JAYARAMAN TANJORE V, DAS DIBAKAR, SINGH DEEPIKA, MISHRA ABHUDAYA, ARJUNAN ARUL CHAKKARAVARTHI
Format Patent
LanguageEnglish
Korean
Published 19.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness <6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.
Bibliography:Application Number: KR20117027033