CHEMICAL MECHANICAL POLISHING OF SILICON CARBIDE COMPRISING SURFACES
Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Korean |
Published |
19.04.2012
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Subjects | |
Online Access | Get full text |
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Summary: | Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness <6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed. |
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Bibliography: | Application Number: KR20117027033 |