HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

PURPOSE: A high efficiency light emitting diode and a manufacturing method thereof are provided to improve optical extraction efficiency of the light emitting diode by forming a top insulating layer according to the rough surface of a semiconductor stacked structure in order to have an unevenness su...

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Bibliographic Details
Main Authors KIM, CHANG YOUN, KIM, DA HYE
Format Patent
LanguageEnglish
Korean
Published 04.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A high efficiency light emitting diode and a manufacturing method thereof are provided to improve optical extraction efficiency of the light emitting diode by forming a top insulating layer according to the rough surface of a semiconductor stacked structure in order to have an unevenness surface. CONSTITUTION: A semiconductor stacked structure(30) is located on the surface of a supporting substrate(41). A semiconductor comprises a p-type compound semiconductor layer(29), an active layer(27), and an n-type compound semiconductor layer(25). A p- electrode comprises a reflective metal layer and a barrier metal layer(35). An intermediate dielectric layer(33) covers the reflective metal layer between the reflective metal layer and the supporting substrate. A top insulating layer(47) is placed between an n-electrode pad and the semiconductor stacked structure.
Bibliography:Application Number: KR20100092991