THIN FILM DEPOSITION APPARATUS

PURPOSE: A thin film depositing apparatus is provided to prevent the reaction of a first source gas and a second source gas in a gas inlet by spraying a first additional gas between the first source gas and the second source gas. CONSTITUTION: A gas supply unit(130) is installed in the upper center...

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Bibliographic Details
Main Authors LEE, WOO SUNG, CHOI, SUNG MIN, JANG, WOOK SANG
Format Patent
LanguageEnglish
Korean
Published 27.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A thin film depositing apparatus is provided to prevent the reaction of a first source gas and a second source gas in a gas inlet by spraying a first additional gas between the first source gas and the second source gas. CONSTITUTION: A gas supply unit(130) is installed in the upper center of a susceptor. The gas supply unit includes a first source gas spray unit(141), a second source gas spray unit(142), and a first additional gas spray unit(143). The first source gas spray unit receives the first source gas from the outside of a chamber and sprays the first source gas to the upper side of the susceptor. A second source gas spray unit is arranged on the lower side of the first source gas spray unit. The first additional gas spray unit is arranged between the first and second source gas spray units.
Bibliography:Application Number: KR20100091854